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Main Content
Kingston Technology 512M x 64-Bit SDRAM Memory Module - KVR1066D3N74G
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Abt Model: KVR1066D3N74G
UPC: 740617148336
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Kingston Technology 512M x 64-Bit SDRAM Memory Module - KVR1066D3N74G
Features:
- JEDEC standard 1.5V ± 0.075V Power Supply
- VDDQ = 1.5V ± 0.075V
- 533MHz fCK for 1066Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 5,6,7,8,9,10
- Posted CAS Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- Programmable CAS Write Latency(CWL) = 6(DDR3-1066)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C
- Asynchronous Reset
- 1066Mbps CL7 doesn’t have backward compatibility with 800Mbps CL5
- PCB : Height 1.180” (30.00mm), double sided component
Specifications:
Performance
- CL(IDD) 7 cycles
- Row Cycle Time (tRCmin) 50.63ns (min.)
- Refresh to Active/Refresh Command Time (tRFCmin) 160ns
- Row Active Time (tRASmin) 37.5ns (min.)
- Power 1.320 W (operating)
- UL Rating 94 V - 0
- Operating Temperature 0o C to 85o C
- Storage Temperature -55o C to +100o C
Approximate Weight:
- Shipping: 1 lbs
California customers:
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Kingston Technology 512M x 64-Bit SDRAM Memory Module
Kingston Technology 512M x 64-Bit SDRAM Memory Module