Kingston Technology 512M x 64-Bit SDRAM Memory Module - KVR1066D3N74G

Kingston Technology 512M x 64-Bit SDRAM Memory Module - KVR1066D3N74G

Features:

• JEDEC standard 1.5V ± 0.075V Power Supply
• VDDQ = 1.5V ± 0.075V
• 533MHz fCK for 1066Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 5,6,7,8,9,10
• Posted CAS Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 6(DDR3-1066)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C
• Asynchronous Reset
• 1066Mbps CL7 doesn’t have backward compatibility with 800Mbps CL5
• PCB : Height 1.180” (30.00mm), double sided component

Specifications:

Performance

• CL(IDD) 7 cycles
• Row Cycle Time (tRCmin) 50.63ns (min.)
• Refresh to Active/Refresh Command Time (tRFCmin) 160ns
• Row Active Time (tRASmin) 37.5ns (min.)
• Power 1.320 W (operating)
• UL Rating 94 V - 0
• Operating Temperature 0o C to 85o C
• Storage Temperature -55o C to +100o C

Approximate Weight:

• Shipping: 1 lbs